BAS16HLPQ-7B
DIODE GEN PURP 100V 215MA 2DFN
BAS16HLPQ-7B Specifications
Mounting Type：
Surface Mount
Grade：
Automotive
Package / Case：
0402 (1006 Metric)
Technology：
Standard
Speed：
Fast Recovery =< 500ns, > 200mA (Io)
Qualification：
AEC-Q101
Voltage - DC Reverse (Vr) (Max)：
100 V
Operating Temperature - Junction：
-65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If：
1.25 V @ 150 mA
Reverse Recovery Time (trr)：
4 ns
Capacitance @ Vr, F：
1.5pF @ 0V, 1MHz
Supplier Device Package：
X1-DFN1006-2
Current - Average Rectified (Io)：
215mA
Current - Reverse Leakage @ Vr：
500 nA @ 80 V
