DMC3032LFDB-13
MOSFET N/P-CH 30V 5.3A 6UDFN
DMC3032LFDB-13 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
30V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
6-UDFN Exposed Pad
Configuration：
N and P-Channel Complementary
Power - Max：
800mW
Supplier Device Package：
U-DFN2020-6 (Type B)
Current - Continuous Drain (Id) @ 25°C：
5.3A (Ta), 3.4A (Ta)
Rds On (Max) @ Id, Vgs：
30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：
2V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
10.6nC @ 10V, 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：
500pF @ 15V, 336pF @ 25V
