DMN10H220LDV-7
MOSFET 2N-CH 100V PWRDI3333
DMN10H220LDV-7 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
8-PowerVDFN
Configuration：
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)：
100V
Supplier Device Package：
PowerDI3333-8 (Type UXC)
Current - Continuous Drain (Id) @ 25°C：
10.5A (Tc)
Rds On (Max) @ Id, Vgs：
222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs：
6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：
366pF @ 50V
Power - Max：
1.8W (Ta), 40W (Tc)
