DMN10H220LFDF-7
MOSFET BVDSS: 61V~100V U-DFN2020
DMN10H220LFDF-7 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
6-UDFN Exposed Pad
Supplier Device Package：
U-DFN2020-6 (Type F)
Power Dissipation (Max)：
1.1W (Ta)
Current - Continuous Drain (Id) @ 25°C：
2.2A (Ta)
Gate Charge (Qg) (Max) @ Vgs：
6.7 nC @ 10 V
Rds On (Max) @ Id, Vgs：
225mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
384 pF @ 25 V
