DMN10H220LFVW-7
MOSFET BVDSS: 61V~100V POWERDI33
DMN10H220LFVW-7 Specifications
Mounting Type：
Surface Mount, Wettable Flank
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
8-PowerVDFN
Current - Continuous Drain (Id) @ 25°C：
11A (Tc)
Supplier Device Package：
PowerDI3333-8 (SWP) Type UX
Rds On (Max) @ Id, Vgs：
222mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs：
6.7 nC @ 10 V
Power Dissipation (Max)：
2.4W (Ta), 41W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
366 pF @ 50 V
