DMN10H220LK3-13
MOSFET N-CH 100V 7.5A TO252
DMN10H220LK3-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package：
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C：
7.5A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
6.7 nC @ 10 V
Rds On (Max) @ Id, Vgs：
220mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
384 pF @ 25 V
Power Dissipation (Max)：
18.7W (Tc)
