DMN29M9UFDF-13
MOSFET BVDSS: 25V~30V U-DFN2020-
DMN29M9UFDF-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Power Dissipation (Max)：
1.2W (Ta)
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±12V
Vgs(th) (Max) @ Id：
1.2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 4.5V
Package / Case：
6-UDFN Exposed Pad
Supplier Device Package：
U-DFN2020-6 (Type F)
Current - Continuous Drain (Id) @ 25°C：
11A (Ta)
Rds On (Max) @ Id, Vgs：
13.5mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
655 pF @ 8 V
