DMN32D0LFB4-7B
MOSFET BVDSS: 25V-30V X2-DFN1006
DMN32D0LFB4-7B Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Power Dissipation (Max)：
350mW (Ta)
Drain to Source Voltage (Vdss)：
30 V
Vgs(th) (Max) @ Id：
1.2V @ 250µA
Package / Case：
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs：
0.6 nC @ 4.5 V
Supplier Device Package：
X2-DFN1006-3
Rds On (Max) @ Id, Vgs：
1.2Ohm @ 100mA, 4V
Current - Continuous Drain (Id) @ 25°C：
440mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：
1.8V, 2.5V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
44.8 pF @ 15 V
