DMNH6010SCTB-13
MOSFET BVDSS: 41V~60V TO263 T&R
DMNH6010SCTB-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Package / Case：
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：
TO-263AB (D2PAK)
Gate Charge (Qg) (Max) @ Vgs：
46 nC @ 10 V
Vgs(th) (Max) @ Id：
4V @ 1mA
Rds On (Max) @ Id, Vgs：
10mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
2692 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C：
133A (Tc)
Power Dissipation (Max)：
5W (Ta), 375W (Tc)
