DMP1012USSQ-13
MOSFET BVDSS: 8V~24V SO-8 T&R 2.
DMP1012USSQ-13 Specifications
Mounting Type:
Surface Mount
Grade:
Automotive
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:
8-SO
Technology:
MOSFET (Metal Oxide)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Qualification:
AEC-Q101
Drain to Source Voltage (Vdss):
12 V
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:
8.5A (Ta)
Power Dissipation (Max):
1.3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1344 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 8 V
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 9A, 4.5V