DMP2016UFDF-7
MOSFET BVDSS: 8V~24V U-DFN2020-6
DMP2016UFDF-7 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
FET Type：
P-Channel
Drain to Source Voltage (Vdss)：
20 V
Vgs (Max)：
±8V
Drive Voltage (Max Rds On, Min Rds On)：
1.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs：
30 nC @ 8 V
Package / Case：
6-UDFN Exposed Pad
Vgs(th) (Max) @ Id：
1.1V @ 250µA
Supplier Device Package：
U-DFN2020-6 (Type F)
Current - Continuous Drain (Id) @ 25°C：
9.5A (Ta)
Power Dissipation (Max)：
900mW (Ta)
Rds On (Max) @ Id, Vgs：
15mOhm @ 7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：
1710 pF @ 10 V
