DMT10H003SPSW-13
MOSFET BVDSS: 61V~100V POWERDI50
DMT10H003SPSW-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs：
85 nC @ 10 V
Rds On (Max) @ Id, Vgs：
3mOhm @ 30A, 10V
Supplier Device Package：
PowerDI5060-8 (Type Q)
Current - Continuous Drain (Id) @ 25°C：
152A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
5542 pF @ 50 V
Power Dissipation (Max)：
2.2W (Ta), 139W (Tc)
