DMT10H009LCG-7
MOSFET N-CH 100V 12.4A/47A 8DFN
DMT10H009LCG-7 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
8-PowerVDFN
Power Dissipation (Max)：
1W (Ta)
Supplier Device Package：
V-DFN3333-8 (Type B)
Rds On (Max) @ Id, Vgs：
8.8mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
2309 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs：
20.2 nC @ 4.5 V
Current - Continuous Drain (Id) @ 25°C：
12.4A (Ta), 47A (Tc)
