DMT10H009SCG-7
MOSFET BVDSS: 61V~100V V-DFN3333
DMT10H009SCG-7 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
8-PowerVDFN
Vgs(th) (Max) @ Id：
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：
30 nC @ 10 V
Power Dissipation (Max)：
1.3W (Ta)
Supplier Device Package：
V-DFN3333-8 (Type B)
Input Capacitance (Ciss) (Max) @ Vds：
2085 pF @ 50 V
Rds On (Max) @ Id, Vgs：
9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C：
14A (Ta), 48A (Tc)
