DMT10H052LFDF-7
MOSFET BVDSS: 61V~100V U-DFN2020
DMT10H052LFDF-7 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Package / Case：
6-UDFN Exposed Pad
Current - Continuous Drain (Id) @ 25°C：
5A (Ta)
Supplier Device Package：
U-DFN2020-6 (Type F)
Power Dissipation (Max)：
800mW (Ta)
Rds On (Max) @ Id, Vgs：
52mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs：
5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
258 pF @ 50 V
