DMT10H9M9SCT
MOSFET BVDSS: 61V~100V TO220AB T
DMT10H9M9SCT Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Supplier Device Package：
TO-220-3
Gate Charge (Qg) (Max) @ Vgs：
30 nC @ 10 V
Vgs(th) (Max) @ Id：
3.9V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds：
2085 pF @ 50 V
Rds On (Max) @ Id, Vgs：
8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C：
99A (Tc)
Power Dissipation (Max)：
2.3W (Ta), 156W (Tc)
