DMT35M8LDG-7
MOSFET 2N-CH 30V 17A PWRDI3333
DMT35M8LDG-7 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
30V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
8-PowerVDFN
Configuration：
2 N-Channel (Dual) Asymmetrical
Vgs(th) (Max) @ Id：
1.9V @ 250µA
Supplier Device Package：
PowerDI3333-8 (Type G)
Current - Continuous Drain (Id) @ 25°C：
17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs：
4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs：
22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：
1510pF @ 15V, 1032pF @ 15V
Power - Max：
980mW (Ta), 2W (Tc)
