DMT6015LPDW-13
MOSFET 2N-CH 60V 9.4A PWRDI50
DMT6015LPDW-13 Specifications
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
8-PowerTDFN
Configuration：
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)：
60V
Supplier Device Package：
PowerDI5060-8 (Type UXD)
Rds On (Max) @ Id, Vgs：
18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C：
9.4A (Ta), 17.1A (Tc)
Gate Charge (Qg) (Max) @ Vgs：
15.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：
808pF @ 30V
Power - Max：
2.4W (Ta), 7.9W (Tc)
