DMT6017LFDF-13
MOSFET N-CH 65V 8.1A 6UDFN
DMT6017LFDF-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
6-UDFN Exposed Pad
Vgs (Max)：
±16V
Supplier Device Package：
U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id：
2.3V @ 250µA
Power Dissipation (Max)：
800mW (Ta)
Gate Charge (Qg) (Max) @ Vgs：
15.3 nC @ 10 V
Drain to Source Voltage (Vdss)：
65 V
Rds On (Max) @ Id, Vgs：
18mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
891 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C：
8.1A (Ta)
