DMT62M7SPSW-13
MOSFET BVDSS: 41V~60V POWERDI506
DMT62M7SPSW-13 Specifications
Mounting Type：
Surface Mount, Wettable Flank
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
8-PowerTDFN
Power Dissipation (Max)：
2.5W (Ta), 125W (Tc)
Current - Continuous Drain (Id) @ 25°C：
163A (Tc)
Rds On (Max) @ Id, Vgs：
2.7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs：
68.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
4973 pF @ 30 V
Supplier Device Package：
PowerDI5060-8 (Type UX)
