DMT64M1LPSW-13
MOSFET BVDSS: 61V~100V POWERDI50
DMT64M1LPSW-13 Specifications
Mounting Type：
Surface Mount, Wettable Flank
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
8-PowerTDFN
Supplier Device Package：
PowerDI5060-8 (Type UX)
Drain to Source Voltage (Vdss)：
65 V
Gate Charge (Qg) (Max) @ Vgs：
51.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2626 pF @ 30 V
Rds On (Max) @ Id, Vgs：
4.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C：
21.8A (Ta), 81.7A (Tc)
Power Dissipation (Max)：
3.14W (Ta), 44W (Tc)
