DMT67M8LPSW-13
MOSFET N-CH 60V 17.3A/82A PWRDI
DMT67M8LPSW-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id：
2.5V @ 250µA
Package / Case：
8-PowerTDFN
Rds On (Max) @ Id, Vgs：
6.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs：
37.5 nC @ 10 V
Supplier Device Package：
PowerDI5060-8 (Type Q)
Current - Continuous Drain (Id) @ 25°C：
17.3A (Ta), 82A (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
2130 pF @ 30 V
Power Dissipation (Max)：
2.8W (Ta), 62.5W (Tc)
