DMT8007LPSW-13
MOSFET BVDSS: 61V~100V POWERDI50
DMT8007LPSW-13 Specifications
Mounting Type：
Surface Mount, Wettable Flank
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Vgs (Max)：
±20V
Current - Continuous Drain (Id) @ 25°C：
100A (Tc)
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
8-PowerTDFN
Drain to Source Voltage (Vdss)：
80 V
Vgs(th) (Max) @ Id：
2.8V @ 1mA
Supplier Device Package：
PowerDI5060-8 (Type UX)
Rds On (Max) @ Id, Vgs：
6.5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs：
45.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
2682 pF @ 40 V
Power Dissipation (Max)：
1.5W (Ta), 104W (Tc)
