DMT8008SCT
MOSFET BVDSS: 61V~100V TO220AB T
DMT8008SCT Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-220-3
Gate Charge (Qg) (Max) @ Vgs：
34 nC @ 10 V
Supplier Device Package：
TO-220-3
Drain to Source Voltage (Vdss)：
80 V
Vgs(th) (Max) @ Id：
4V @ 1mA
Current - Continuous Drain (Id) @ 25°C：
111A (Tc)
Rds On (Max) @ Id, Vgs：
7.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
1950 pF @ 40 V
Power Dissipation (Max)：
2.4W (Ta), 167W (Tc)
