DMT8008SK3-13
MOSFET BVDSS: 61V~100V TO252 T&R
DMT8008SK3-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)：
6V, 10V
Vgs (Max)：
±20V
Operating Temperature：
-55°C ~ 150°C (TJ)
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs：
34 nC @ 10 V
Drain to Source Voltage (Vdss)：
80 V
Supplier Device Package：
TO-252 (DPAK)
Vgs(th) (Max) @ Id：
4V @ 1mA
Current - Continuous Drain (Id) @ 25°C：
90A (Tc)
Power Dissipation (Max)：
1.7W (Ta)
Input Capacitance (Ciss) (Max) @ Vds：
1950 pF @ 40 V
Rds On (Max) @ Id, Vgs：
7.8mOhm @ 14A, 10V
