DMTH10H1M7STLW-13
MOSFET BVDSS: 61V~100V POWERDI10
DMTH10H1M7STLW-13 Specifications
Mounting Type：
Surface Mount
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
8-PowerSFN
Rds On (Max) @ Id, Vgs：
2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C：
250A (Tc)
Supplier Device Package：
POWERDI1012-8
Gate Charge (Qg) (Max) @ Vgs：
147 nC @ 10 V
Power Dissipation (Max)：
6W (Ta), 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
9871 pF @ 50 V
