DMTH10H4M6SPSW-13
MOSFET BVDSS: 61V~100V POWERDI50
DMTH10H4M6SPSW-13 Specifications
Mounting Type：
Surface Mount, Wettable Flank
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Vgs (Max)：
±20V
Drain to Source Voltage (Vdss)：
100 V
Drive Voltage (Max Rds On, Min Rds On)：
10V
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
4V @ 250µA
Package / Case：
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs：
66 nC @ 10 V
Supplier Device Package：
PowerDI5060-8 (Type UX)
Rds On (Max) @ Id, Vgs：
4.9mOhm @ 30A, 10V
Power Dissipation (Max)：
4.7W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds：
4327 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C：
21A (Ta), 115A (Tc)
