DMTH61M8LPSQ-13
MOSFET BVDSS: 41V~60V POWERDI506
DMTH61M8LPSQ-13 Specifications
Mounting Type:
Surface Mount
Grade:
Automotive
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Vgs (Max):
±20V
Operating Temperature:
-55°C ~ 175°C (TJ)
Qualification:
AEC-Q101
Package / Case:
8-PowerTDFN
Vgs(th) (Max) @ Id:
3V @ 250µA
Supplier Device Package:
PowerDI5060-8 (Type K)
Current - Continuous Drain (Id) @ 25°C:
225A (Tc)
Rds On (Max) @ Id, Vgs:
1.6mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
115.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
8320 pF @ 30 V
Power Dissipation (Max):
3.2W (Ta), 187.5W (Tc)