DMTH69M8LFVW-13
MOSFET N-CH 60V 15.9/45.4A PWRDI
DMTH69M8LFVW-13 Specifications
Mounting Type：
Surface Mount, Wettable Flank
FET Type：
N-Channel
Technology：
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：
60 V
Drive Voltage (Max Rds On, Min Rds On)：
4.5V, 10V
Package / Case：
8-PowerVDFN
Operating Temperature：
-55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id：
3V @ 250µA
Vgs (Max)：
±16V
Supplier Device Package：
PowerDI3333-8 (SWP) Type UX
Rds On (Max) @ Id, Vgs：
9.5mOhm @ 13.5A, 10V
Gate Charge (Qg) (Max) @ Vgs：
33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds：
1925 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C：
15.9A (Ta), 45.4A (Tc)
Power Dissipation (Max)：
3.6W (Ta), 29.4W (Tc)
