DMWS120H100SM4
SIC MOSFET BVDSS: >1000V TO247-4
DMWS120H100SM4 Specifications
Mounting Type：
Through Hole
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)：
1200 V
Supplier Device Package：
TO-247-4
Package / Case：
TO-247-4
Technology：
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)：
15V
Power Dissipation (Max)：
208W (Tc)
Vgs(th) (Max) @ Id：
3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：
52 nC @ 15 V
Current - Continuous Drain (Id) @ 25°C：
37.2A (Tc)
Vgs (Max)：
+19V, -8V
Rds On (Max) @ Id, Vgs：
100mOhm @ 20A, 15V
Input Capacitance (Ciss) (Max) @ Vds：
1516 pF @ 1000 V
