DMWSH120H28SM4Q
SIC MOSFET BVDSS: >1000V TO247-4
DMWSH120H28SM4Q Specifications
Mounting Type：
Through Hole
Grade：
Automotive
FET Type：
N-Channel
Current - Continuous Drain (Id) @ 25°C：
100A (Tc)
Operating Temperature：
-55°C ~ 175°C (TJ)
Qualification：
AEC-Q101
Technology：
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：
1200 V
Supplier Device Package：
TO-247-4
Package / Case：
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)：
15V
Vgs(th) (Max) @ Id：
3.6V @ 17.7mA
Power Dissipation (Max)：
429W (Tc)
Vgs (Max)：
+19V, -8V
Rds On (Max) @ Id, Vgs：
28.5mOhm @ 50A, 15V
Gate Charge (Qg) (Max) @ Vgs：
156.3 nC @ 15 V
