DMWSH120H90SM4Q
SIC MOSFET BVDSS: >1000V TO247-4
DMWSH120H90SM4Q Specifications
Mounting Type：
Through Hole
Grade：
Automotive
FET Type：
N-Channel
Operating Temperature：
-55°C ~ 175°C (TJ)
Qualification：
AEC-Q101
Current - Continuous Drain (Id) @ 25°C：
40A (Tc)
Technology：
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：
1200 V
Supplier Device Package：
TO-247-4
Package / Case：
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)：
15V
Vgs(th) (Max) @ Id：
3.5V @ 5mA
Vgs (Max)：
+19V, -8V
Power Dissipation (Max)：
235W (Tc)
Rds On (Max) @ Id, Vgs：
97.5mOhm @ 20A, 15V
Gate Charge (Qg) (Max) @ Vgs：
47.6 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds：
1112 pF @ 1000 V
