DSC08065D1
DIODE SIL CARBIDE 650V 8A TO252
DSC08065D1 Specifications
Mounting Type：
Surface Mount
Technology：
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：
650 V
Speed：
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：
0 ns
Operating Temperature - Junction：
-55°C ~ 175°C
Package / Case：
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Average Rectified (Io)：
8A
Voltage - Forward (Vf) (Max) @ If：
1.7 V @ 8 A
Current - Reverse Leakage @ Vr：
230 µA @ 650 V
Supplier Device Package：
TO-252 (Type WX)
Capacitance @ Vr, F：
295pF @ 100mV, 1MHz
