DXTN5860DFDB-7
SS LOW SAT TRANSISTOR U-DFN2020-
DXTN5860DFDB-7 Specifications
Mounting Type：
Surface Mount
Operating Temperature：
-55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max)：
100nA
Transistor Type：
NPN
Voltage - Collector Emitter Breakdown (Max)：
60 V
Current - Collector (Ic) (Max)：
6 A
Package / Case：
3-UDFN Exposed Pad
Frequency - Transition：
115MHz
Power - Max：
690 mW
Supplier Device Package：
U-DFN2020-3 (Type B)
DC Current Gain (hFE) (Min) @ Ic, Vce：
280 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic：
315mV @ 300mA, 6A
