FUS1ME
DIODE GEN PURP 1KV 1A F1A
FUS1ME Specifications
Mounting Type：
Surface Mount
Technology：
Standard
Speed：
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)：
1A
Operating Temperature - Junction：
-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)：
1000 V
Voltage - Forward (Vf) (Max) @ If：
1.7 V @ 1 A
Reverse Recovery Time (trr)：
75 ns
Current - Reverse Leakage @ Vr：
5 µA @ 1000 V
Capacitance @ Vr, F：
10pF @ 4V, 1MHz
Package / Case：
DO-219AA
Supplier Device Package：
F1A (DO219AA)
