DXTC3C100PDQ-13
SS Low Sat Transistor PowerDI506
DXTC3C100PDQ-13 Specifications
Tipo de montaje:
Surface Mount
Calificación:
Automotive
Temperatura de funcionamiento:
-55°C ~ 150°C (TJ)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
100nA
Paquete / Estuche:
8-PowerTDFN
Current - Collector (Ic) (Max):
3A
Paquete de dispositivo del proveedor:
PowerDI5060-8 (Type UXD)
Tipo de transistor:
1 NPN, 1 PNP
Voltage - Collector Emitter Breakdown (Max):
100V
Vce Saturation (Max) @ Ib, Ic:
330mV @ 300mA, 3A / 325mV @ 200mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 10V / 170 @ 500mA, 10V
Potencia - Máx.:
1.47W
Frequency - Transition:
130MHz, 100MHz