DXTN3C100PDQ-13
SS Low Sat Transistor PowerDI506
DXTN3C100PDQ-13 Specifications
Mounting Type：
Surface Mount
Grade：
Automotive
Operating Temperature：
-55°C ~ 150°C (TJ)
Qualification：
AEC-Q101
Current - Collector Cutoff (Max)：
100nA
Package / Case：
8-PowerTDFN
Transistor Type：
2 NPN (Dual)
Current - Collector (Ic) (Max)：
3A
Supplier Device Package：
PowerDI5060-8 (Type UXD)
Frequency - Transition：
130MHz
Voltage - Collector Emitter Breakdown (Max)：
100V
Power - Max：
1.47W
Vce Saturation (Max) @ Ib, Ic：
330mV @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce：
150 @ 500mA, 10V
