DXTP3C100PDQ-13
SS Low Sat Transistor PowerDI506
DXTP3C100PDQ-13 Specifications
Mounting Type:
Surface Mount
Grade:
Automotive
Operating Temperature:
-55°C ~ 175°C (TJ)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
100nA
Package / Case:
8-PowerTDFN
Frequency - Transition:
100MHz
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
3A
Supplier Device Package:
PowerDI5060-8 (Type UXD)
Voltage - Collector Emitter Breakdown (Max):
100V
DC Current Gain (hFE) (Min) @ Ic, Vce:
170 @ 500mA, 10V
Vce Saturation (Max) @ Ib, Ic:
325mV @ 200mA, 2A
Power - Max:
1.76W